OZONE FOR SEMICONDUCTOR & ALD

Wafer cleaning processes are becoming increasingly important in semiconductor manufacturing as wafer structures become more complex. In semiconductor fabrication, cleanliness is critical for ensuring the quality and performance of the final devices. Contaminants such as organic residues, metals, and particles can cause defects in the devices and negatively impact their performance. Ozone is attractive to wet cleaning and photoresist removal methods because it is highly reactive, breaking down organic compounds rapidly and effectively. It is also relatively safe, as ozone quickly reverts back to oxygen after it has reacted with the contaminants. Ozone/water cleaning processes are less expensive and more environmentally benign than RCA cleaning techniques. Ozone is no longer merely of scientific interest in semiconductor applications; it can provide practical benefits in wafer and IC manufacturing processes.

Ozone in semiconductor cleaning applications is also environmentally friendly. Some of the advantages of ozone are the reduction of water consumption and the elimination of expensive chemical products. Additionally, the industry can use ozonated water to remove photoresist and remove metal and particulate contamination.

Ozone for ALD can be used as a replacement for traditional precursors such as halogens or hydrogen peroxide. In ALD, ozone is used to oxidize the substrate surface, allowing for the deposition of high-quality, conformal films with well-defined thicknesses. Ozone is a highly reactive species that can penetrate into small spaces and cavities, making it ideal for depositing thin films on high aspect ratio structures. Additionally, ozone is a very effective oxidant, which makes it well-suited for depositing oxide films. One of the main advantages of using ozone in ALD is its ability to reduce the number of process steps and increase the efficiency of the deposition process. This results in faster deposition times, reduced precursor usage, and reduced material waste. Additionally, ozone is environmentally friendly and does not produce hazardous by-products, making it a more sustainable alternative to traditional precursors.

What is Ozone and How Does it Work in Semiconductors?

Ozone gas is highly reactive and can effectively break down a wide range of contaminants. In semiconductor manufacturing, ozone gas is used to remove contaminants from the surface of the silicon wafers by exposing them to an ozone-based cleaning solution. The ozone in the solution reacts with the contaminants and breaks them down, leaving the surface clean and free of impurities.

The Advantages of Using Ozone in Semiconductor Manufacturing

1. High Effectiveness: Ozone is highly reactive and can quickly and effectively remove a wide range of contaminants, including organic residues, metals, and particles. This makes it an ideal choice for cleaning semiconductor surfaces in order to maintain a high level of cleanliness.
2. Environmentally Friendly: Ozone is a naturally occurring gas that quickly reverts back to oxygen after it has reacted with contaminants. This makes it an environmentally friendly alternative to other cleaning agents that may contain harmful chemicals.
3. Efficiency: Ozone is a fast-acting cleaning agent that can quickly and effectively remove contaminants from surfaces. This makes it an efficient option for cleaning processes where time is a critical factor.
4. Versatility: Ozone can be used in a variety of cleaning applications, including surface cleaning, water treatment, and air purification. This makes it a versatile option for a range of industries.
5. Safe: When used correctly, ozone is generally considered safe for both workers and the environment.

Ozone for ALD Deposition – How Does It Work?

ALD Atomic Layer Deposition is a thin film deposition in technique with exact control over the thickness. It is used in a wide range of sectors including semiconductor Energy storage, biomedical, optics, and other high-tech industries. This molecular layer deposition technology is based on the precise and controlled growth of ultra-thin films on an atomic scale by sequential chemical reactions on a substrate surface. The basic principle of ALD is to alternate the exposure of the substrate to two or more gaseous precursors. Each precursor is designed to react selectively with the substrate and produce a specific chemical bond. After each exposure, the excess precursor is removed, leaving only a monolayer of the desired material on the substrate. The process is repeated until the desired thickness of the thin film is achieved. This makes ALD suitable for depositing a high-quality thin film on complex structures with high aspect ratios. Additionally, the high level of control over the thickness and composition of the films makes ALD ideal for applications in the semiconductor industry, where high precision and uniformity are critical.

One of the key factors in the success of an ALD is the use of the right oxidizer, and ozone is the best choice. One of the major benefits of using ozone is its high reactivity. Ozone is a highly reactive gas that can quickly and efficiently react with precursors, leading to faster film growth and improved efficiency. This can result in significant time and cost savings. Ozone is used as a deposition medium due to its several benefits:

The Advantages of Using Ozone in the ALD process

1. Precise control over thin film thickness and High-quality films: Ozone produces films with uniform thickness and well-defined crystal structures. The use of ozone in ALD also provides improved surface coverage, making it an attractive option for applications that require high-quality films with specific material properties. This, in turn, can lead to better performance, increased reliability, and reduced risk of product failure.
2. Wide range of materials: Ozone can be used to deposit a wide range of materials, including metals, oxides, and nitrides, making it a versatile tool for advanced manufacturing. Ozone allows manufacturers to use a single deposition process to produce a variety of products with different material properties, reducing the need for multiple processes and equipment.
3. Low-temperature processing: Ozone reactions in ALD typically take place at relatively low temperatures, which makes it suitable for use with temperature-sensitive substrates. The low-temperature process also helps to reduce the risk of substrate damage or degradation, leading to an improved thermal ALD process.
4. Low-cost: Ozone is an inexpensive reactant, which can help to keep the cost of ALD processes low. For example, temperature-sensitive substrates such as flexible electronic devices, bio-implants, or optical fibers can be damaged or degraded when exposed to high temperatures during deposition processes. By using ozone in ALD, manufacturers can avoid these issues and produce high-quality films without causing damage to the substrate.

In conclusion, ozone can significantly improve the efficiency and quality of your atomic layer process. Its high reactivity, ability to penetrate surfaces and environmental friendliness make it an attractive choice for many applications. If you’re looking to improve efficiency and quality, consider switching to ozone as your oxidizer.

FOUR REASONS WHY ABSOLUTE OZONE® | OZONE GENERATORS ARE THE #1 CHOICE FOR SEMICONDUCTOR OZONE & ALD

1. HIGH CONCENTRATION OZONE – Absolute Ozone offers the best-performing ozone generators on the world market today (up to 22 % by weight) at a fraction of the cost of the competition. In fact, the higher the concentration of ozone injected, the faster the reaction time and the faster the response time for treatment and production.
2.  AIR-COOLED OZONE – Most ozone generators on the market today in the high concentration output range operate using water-cooling technology. Water cooling is generally not maintenance-friendly and requires scrubbing and regular cleaning to maintain the performance specified by the manufacturer. At Absolute Ozone, we have developed an efficient and more economical way of seamlessly delivering high ozone concentration using air-cooling technology that is verifiably more cost-effective than water-cooling.
3. 5-YEAR PERFORMANCE WARRANTY – Unlike the others, at Absolute Ozone, we guarantee our product performance. It has become common practice not to support claims about product performance. At Absolute Ozone, we take a more transparent approach. We give you a clear performance chart for customer reference, we created a product that works well. We will refund your money if an ozone generator we send you is not performing as specified. That’s the Absolute Ozone 5-year guarantee.
4. CUSTOM PRESSURE OPTIONS AVAILABLE – We have worked closely with many semiconductors, IC, and ALD process clients, and we have learned over the years that there indeed may be a standard in the industry. As product requirements can vary from project to project. At Absolute Ozone, we remove the stress of tailoring your project around the product. If required and upon request, we can offer a product with custom pressure settings that will work best for you or your client based on your existing system and parameters.

If you’re looking for a way to improve the efficiency and quality of your semiconductors and ALD process, reduce costs, and stay ahead of the competition, contact us now. Absolute Ozone® will be happy to help you.

Contact us now. Absolute Ozone® trained and experienced staff will provide unlimited assistance to assure that our clients’ projects are helpful and on budget.